Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same

ABSTRACT

A phase change memory device resistant to stack pattern collapse is presented. The phase change memory device includes a silicon substrate, switching elements, heaters, stack patterns, bit lines and word lines. The silicon substrate has a plurality of active areas. The switching elements are connected to the active areas. The heaters are connected to the switching elements. The stack patterns are connected to the heaters. The bit lines are connected to the stack patterns. The word lines are connected to the active areas of the silicon substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2008-0039512 filed on Apr. 28, 2008, which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a phase change memory device and amethod for manufacturing the same, and more particularly, to a phasechange memory device which can prevent the collapse of the stackpatterns of a phase change layer and top electrodes and a method formanufacturing the same.

Memory devices are generally divided into volatile RAMs (random accessmemory) that lose inputted information when power is interrupted andnon-volatile ROMs (read-only memory) that can maintain the stored stateof inputted information even when power is interrupted. Some well knownvolatile RAMs include DRAMs (dynamic RAM) and SRAMs (static RAM). A wellknown non-volatile ROM includes a flash memory device such as an EEPROM(electrically erasable and programmable ROM).

Although DRAMs are excellent memory devices, DRAMs require a relativelyhigh charge storing capacity. Since the surface area of an electrode ofa DRAM must be increased, it is difficult to accomplish a high level ofintegration for DRAMs. Due to the fact that two gates are stacked oneach other for many flash memory devices, high operation voltages areneeded as compared to a power supply voltage. According, a separatebooster circuit is often needed for flash memory devices in order togenerate the necessary voltages required to perform write and deleteoperations. Further, high level of integration of flash memory devicesis also difficult to accomplish.

Much interest has been made in an effort to develop a novel memorydevice that exhibit simple configurations and that can more easilyachieve a high level of integration while retaining the many of thedesirable characteristics of non-volatile memory devices. Phase changememory devices promise to realize many of these desirable features.

In the phase change memory device function on the basis of the fact thata phase change can occur in a phase change layer interposed between abottom electrode and a top electrode. This phase change is associatedwith a reversible transformation between a crystalline state and anamorphous state brought about by a current flow between the bottomelectrode and the top electrode. Accordingly information can be storedin a memory cell of a phase change memory device by measuring theresistances because the specific resistances between the crystallinestate and the amorphous state are different.

Phase change memory device often incorporate a chalcogenide layercomposed of such material such as germanium (Ge), stibium (Sb), sulfur(S), selenium (Se) and tellurium (Te) is employed as a phase changelayer. As a current is applied, the phase change layer undergoes a phasechange transition induced by heat, that is, Joule heat, between theamorphous state and the crystalline state.

Accordingly, in the phase change memory device, the specific resistanceof the phase change layer in the amorphous state is often times higherthan the specific resistance of the phase change layer in thecrystalline state. In a read mode, by sensing the current flowingthrough the phase change layer, it can be determined whether or not theinformation stored in a phase change cell has a logic valuecorresponding to a ‘1’ or a ‘0’.

Conventional phase change memory device are realized by sequentiallydepositing a phase change material layer and a top electrode materiallayer on a bottom electrode and then etching the top electrode materiallayer and the phase change material layer so that top electrodes and aphase change layer are formed. The stack patterns of the phase changelayer and the top electrodes have a vertical linear shape.

In the conventional phase change memory devices, the stack patterns ofthe phase change layer and the top electrodes are formed having a lengththat extends from a sense amplifier over about one thousand cells. Inthe convention phase change memory devices, when the stack patterns arepatterned to have a vertical line width below 150 nm, a problem canarise that causes the stack patterns to be prone to collapsing.

This collapsing problem can be minimized or avoided by patterning thetop electrode and the phase change layer on cells that have the shape ofa pillar. Nevertheless, in this case, because four regions correspondingto the peripheral surfaces of the phase change layer are left open, thecomposition of the phase change layer is also likely to change in theopen regions, According the programming current distribution may have tobe widened, and as a result the sensing margin decreases.

Therefore, in order to improve and increase the reliability and themanufacturing yield of the phase change memory device, it is necessaryto reduce the etch loss of the phase change layer and prevent thecollapse of the stack pattern.

SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to a phase changememory device which can minimize the occurrence or prevent the collapseof the stack patterns of a phase change layer and top electrodes, and amethod for manufacturing the same.

Also, embodiments of the present invention are directed to a phasechange memory device which can reduce the etch loss of a phase changelayer, thereby securing a sensing margin, and a method for manufacturingthe same.

Further, embodiments of the present invention are directed to a phasechange memory device which can reduce the etch loss of a phase changelayer and prevent the collapse of the stack patterns of the phase changelayer and top electrodes, thereby improving the reliability thereof andincreasing the manufacturing yield, and a method for manufacturing thesame.

In one aspect, a phase change memory device comprises stack patterns ofa phase change layer and top electrodes, formed over a siliconsubstrate; and bit lines formed over the stack patterns to be connectedwith the stack patterns, wherein each of the stack patterns of the phasechange layer and the top electrodes have a length that only extends overtwo memory cells in a parallel direction to that of the bit lines.

The stack patterns can be located in a zigzag pattern along a directionperpendicular to the direction of the bit lines.

The phase change memory device further comprises first top electrodecontacts, wiring patterns and second top electrode contacts interposedbetween the stack patterns and the bit lines.

The first top electrode contacts can be located on center portions ofthe stack patterns with respect to the direction of the bit lines.

The wiring patterns are connected to the stack patterns by way of thefirst top electrode contacts in the structure of a chain.

The second top electrode contacts can be located on center portions ofthe wiring patterns with respect to the direction of the bit lines.

The first top electrode contacts can be located on both sides of thestack patterns so that the first top electrode contacts are provided forrespective cells.

The wiring patterns are located over the stack patterns.

In another aspect, a phase change memory device comprises a siliconsubstrate having a plurality of active regions in that the activeregions extend along a first direction and are arranged at substantiallyregular intervals along a second direction in which the second directionis substantially perpendicular to the first direction; a plurality ofswitching elements formed in the active regions of the siliconsubstrate; a plurality of heaters formed on the respective switchingelements; a plurality of stack patterns formed on the heaters, in whicheach stack pattern comprises a phase change layer and top electrodes,each stack pattern having a length that extends over two cells in thesecond direction and come into contact with the two cells; first topelectrode contacts formed on the stack patterns; a plurality of wiringpatterns formed on the first top electrode contacts in the seconddirection; a plurality of second top electrode contacts formed on thewiring patterns; a plurality of bit lines formed on the second topelectrode contacts so that the bit lines are arranged in the seconddirection; and a plurality of word lines formed over the bit lines sothat the word lines extend along the first direction perpendicular tothe bit lines and so that the word lines are connected with the siliconsubstrate.

The switching elements comprise vertical PN diodes.

The phase change memory device further comprises an N+ base layer formedin surfaces of the active regions of the silicon substrate.

The stack patterns are located in a zigzag pattern along the firstdirection.

The stack patterns may have a width of 10˜200 nm in the first directionand a length of 50˜500 nm in the second direction.

The stack patterns may have a separation distance of 20˜200 nm in thefirst direction and a separation distance of 20˜200 nm in the seconddirection.

The first top electrode contacts may be located on center portions ofthe stack patterns with respect to the second direction.

The first top electrode contacts may have a size of 20˜200 nm in each ofthe first direction and the second direction.

The first top electrode contacts may have sizes that are different inthe first direction and the second direction.

The first top electrode contacts may have a gap of 0˜100 nm between anedge of the top electrode and an edge of each first top electrodecontact.

The wiring patterns are connected with the stack patterns by way of thefirst top electrode contacts in the structure of a chain.

The wiring patterns may have a width of 20˜200 nm in the first directionand a length of 50˜1,000 nm in the second direction.

The wiring patterns may have a separation distance of 10˜100 nm in thefirst direction.

The second top electrode contacts may be located on center portions ofthe wiring patterns in the second direction.

The second top electrode contacts may have a size of 20˜200 nm in eachof the first direction and the second direction.

The second top electrode contacts may have sizes that are different inthe first direction and the second direction.

The bit lines may have a width of 20˜200 nm.

The method for manufacturing a phase change memory device comprises thesteps of forming a plurality of stack patterns on a silicon substrate,in which each stack pattern comprises a phase change layer and a topelectrode; and forming a plurality of bit lines over the stack patternsto be connected to the stack patterns, wherein each stack pattern has alength that only extends over two cells in a direction parallel to thatof the bit lines.

The stack patterns may be formed and located in a zigzag pattern along adirection substantially perpendicular to the direction of the bit lines.

The method may further comprises the step of forming a stack of firsttop electrode contacts, wiring patterns and second top electrodecontacts between the stack patterns and the bit lines.

The first top electrode contacts may be formed to be located on centerportions of the stack patterns with respect to the direction of the bitlines.

The wiring patterns may be formed to be connected with the stackpatterns by way of the first top electrode contacts in the structure ofa chain.

The second top electrode contacts may be formed to be located on centerportions of the wiring patterns with respect to the direction of the bitlines.

The first top electrode contacts may be formed to be located on bothsides of the stack patterns such that the first top electrode contactsare provided for respective cells.

The wiring patterns may be formed to be located over the stack patterns.

The method for manufacturing a phase change memory device comprises thesteps of preparing a silicon substrate having a plurality of activeregions in which the active regions extend along a first direction andare arranged at substantially regular intervals along a seconddirection, in which the second direction is substantially perpendicularto the first direction; forming a plurality of switching elements in theactive regions of the silicon substrate; forming a plurality of heaterson the respective switching elements; forming a plurality of stackpatterns on the heaters, wherein each stack pattern comprises a phasechange layer and a top electrode, each stack pattern has a length thatonly extends over two cells along the second direction and comes intooperational contact with the heaters of two underlying memory cells;forming a plurality of first top electrode contacts on the stackpatterns; forming a plurality of wiring patterns on the first topelectrode contacts, wherein each wiring pattern contacts with two firsttop electrode contacts; forming a plurality of second top electrodecontacts on the wiring patterns; forming a plurality of bit linesconnected with the second top electrode contacts, wherein the bit linesare arranged along the second direction; and forming a plurality of wordlines over the bit lines such that the word lines extend along the firstdirection so that the word lines are substantially perpendicular to thebit lines and wherein the word lines are connected to the siliconsubstrate.

The switching elements may be vertical PN diodes.

Before the step of forming the vertical PN diodes, the method mayfurther comprises the step of forming a plurality of N+ base layers insurfaces of the active regions of the silicon substrate.

The stack patterns may be formed to be located in a zigzag pattern alongthe first direction.

The stack patterns may be formed to have a width of 10˜200 nm in thefirst direction and a length of 50˜500 nm in the second direction.

The stack patterns may be formed to have a separation distance of 20˜200nm in the first direction and a separation distance of 20˜200 nm in thesecond direction.

The first top electrode contacts may be formed to be located on centerportions of the stack patterns when viewed in the second direction.

The first top electrode contacts may be formed to have a size of 20˜200nm in each of the first direction and the second direction.

The first top electrode contacts may be formed to have sizes that aredifferent in the first direction and the second direction.

The first top electrode contacts may be formed to have a gap of 0˜100 nmmeasured between an edge of the top electrode and an edge of each firsttop electrode contact.

The wiring patterns may be formed to be connected with the stackpatterns by way of the first top electrode contacts in the structure ofa chain.

The wiring patterns may be formed to have a width of 20˜200 nm in thefirst direction and a length of 50˜1,000 nm in the second direction.

The wiring patterns may be formed to have a separation distance of10˜100 nm in the first direction.

The second top electrode contacts may be formed to be located on centerportions of the wiring patterns in the second direction.

The second top electrode contacts may be formed to have a size of 20˜200nm in each of the first direction and the second direction.

The second top electrode contacts may be formed to have sizes that aredifferent in the first direction and the second direction.

The bit lines may be formed to have a width of 20˜200 nm.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a phase change memory device inaccordance with an embodiment of the present invention.

FIGS. 2A and 2B are cross-sectional views taken along the lines A-A′ andB-B′ of FIG. 1.

FIGS. 3A through 3H are plan views illustrating the processes of amethod for manufacturing a phase change memory device in accordance withanother embodiment of the present invention.

FIGS. 4A through 4H are cross-sectional views taken along the lines A-A′of FIGS. 3A through 3H.

FIGS. 5A through 5H are sectional views taken along the lines B-B′ ofFIGS. 3A through 3H.

FIGS. 6A through 6D are plan views illustrating the processes of amethod for manufacturing a phase change memory device in accordance withstill another embodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Stack patterns of a phase change layer and top electrodes that areformed along a vertical line exhibit a tendency to collapse. The presentinvention provides a way of fabricating the stack patterns that aresubstantially less prone to collapsing. Further the present inventionprovides the additional benefit that the etch loss of the phase changelayer can be substantially reduced. Yet further, the present inventionprovides for a shortening of the length of the stack patterns of thephase change layer and the top electrodes such that the margin of asubsequent contact process can be secured. Even further the presentinvention provides a decreased contact depth between top electrodes andbit lines, so that the contact process can be more stably conducted.Accordingly, the present invention provides an enhanced reliability anda concomitant increase in the manufacturing yield of these phase changememory devices.

Hereafter, specific embodiments of the present invention will bedescribed with reference to the attached drawings.

FIG. 1 is a plan view illustrating a phase change memory device inaccordance with an embodiment of the present invention, and FIGS. 2A and2B are cross-sectional views taken along the lines A-A′ and B-B′ of FIG.1.

Referring to these drawings, a plurality of active regions A/R aredefined in a silicon substrate 100 such that they extend along a firstdirection X and are arranged at substantially regular intervals along asecond direction Y, in which the second direction is substantiallyperpendicular to the first direction X. An a plurality of N+ base layers102 is then formed on the surfaces of the active regions A/R. Aplurality of vertical PN diodes 110 is then formed on the N+ baselayers, in which the PN diodes 110 act as switching elements. Each firstcontact plug 106 is formed on a corresponding respective N+ base layer102. It is preferred that one string be constituted by vertical PNdiodes 110 which have the number corresponding to a multiple of 2.

The Heaters 114 also serve as bottom electrodes and are formed on therespective vertical PN diodes 110. Each stack patterns 120 comprises aphase change layer 116 and a top electrode 118 that extend along in thesecond direction Y, that is, each stack pattern extends in parallel tothe bit line. According to the present invention, the stack pattern 120have a short length that only extends over two memory cells of thedevice. Also, the stack patterns 120 can be formed in a zigzag patternalong in the first direction X, such that they are in parallel to theword lines.

First top electrode contacts 124 are formed on the center portions ofthe respective stack patterns 120 with respect to the second directionY. The wiring patterns 130 are formed such that each wiring pattern 130is connected to two adjoining first top electrode contacts 124 withrespect to the second direction Y. Second top electrode contacts 136 areformed on the center portions of the respective wiring patterns 130 withrespect to the second direction Y, and bit lines 140 are formed suchthat each bit line 140 is connected with the second top electrodecontacts 136 arranged along the second direction Y. Accordingly, thestack patterns 120 of the phase change layer 116 and the top electrode118 are connected to the bit lines 140.

The word lines 150 are then formed over the bit lines 140 such that theyare connected with the first contact plugs 106 that are formed on the N+base layer 102 by way of second contact plugs 126, buffer patterns 132and third contact plugs 144. The word lines 150 are formed to extendalong the first direction X which is substantially perpendicular to thebit lines 140. Each word line 150 is arranged at regular intervals alongthe second direction Y. The second contact plugs 126 are simultaneouslyformed when forming the first top electrode contacts 124. The bufferpatterns 132 are formed along with the wiring patterns 130.

The stack patterns of the phase change layer and the top electrodes areformed to have a short length that extends over only two adjoiningmemory cells. As a result, collapse of the stack patterns issubstantially avoided and prevented.

Since the stack patterns of the phase change layer and the topelectrodes have a relatively short length, as compared to those of theconventional art, loss of the peripheral portions of the phase changelayer can be substantially avoided and prevented during subsequentetching processes. As a result, changes in the composition of the phasechange layer can be substantially avoided and suppressed. As a result, asensing margin of the phase change memory device of the presentinvention can be substantially secured.

Because the collapse of the stack patterns and change in the compositionof the phase change layer can be substantially prevented, thereliability of the phase change memory device can be substantiallyimproved and the corresponding manufacturing yield can be increased.

In FIGS. 2A and 2B, the reference numeral 104 designates a firstinsulation layer, the reference numeral 112 designates a secondinsulation layer, the reference numeral 122 designates a thirdinsulation layer, the reference numeral 134 designates a fourthinsulation layer, and the reference numeral 142 designates a fifthinsulation layer.

FIGS. 3A through 3H, 4A through 4H, and 5A through 5H are viewsillustrating the processes of a method for manufacturing a phase changememory device in accordance with another embodiment of the presentinvention. Here, FIGS. 3A through 3H are plan views, and FIGS. 4Athrough 4H and 5A through 5H are cross-sectional views taken along thelines A-A′ and B-B′ of FIGS. 3A through 3H.

Referring to FIGS. 3A, 4A and 5A, a plurality of active regions A/R aredefined in a silicon substrate 100 such that they extend along a firstdirection X and are arranged in at substantially regular intervals alonga second direction Y, in which the second direction Y is substantiallyperpendicular to the first direction X. A plurality of N+ base layers102 is formed on the surfaces of the active regions A/R. After forming afirst insulation layer 104 on the silicon substrate 100 that includesthe N+ base layer 102, first holes H1 are etched into the firstinsulation layer 104. The first holes H1 are for delimiting switchingelement forming areas and for defining first contact holes C1 fordelimiting areas for forming first contact plugs to be connected withword lines.

By filling a conductive layer in the first holes H1 and in the firstcontact holes C1, first contact plugs 106 are first formed in the firstcontact holes C1. By ion-implanting N-type impurities at a low dopingconcentration into the silicon layer in the lower half portions of thefirst holes H1 and successively ion-implanting P-type impurities at ahigh doping concentration into the silicon layer in the upper halfportions of the first holes H1, vertical PN diodes 110 serving asswitching elements are formed in the first holes H1. These vertical PNdiodes 110 are formed such that a predetermined number of vertical PNdiodes 110 constitute one string. The first contact plugs 106 are formedon and operative coupled to the N+ base layer 102 between strings. Forexample, one string can be constituted by vertical PN diodes 110 whichhave the number corresponding to a multiple of 2.

A second insulation layer 112 is formed on the first insulation layer104 that has the first contact plugs 106 and the vertical PN diodes 110.After defining second holes H2 by selectively etching the secondinsulation layer 112, the vertical PN diodes 110 are exposed, and byfilling a conductive layer in the second holes H2, a plurality ofheaters 114 serving as bottom electrodes are formed.

While not shown in the drawings, before forming the second insulationlayer 112, a metal silicide layer can be formed on the upper surfaces ofthe vertical PN diodes 110.

Referring to FIGS. 3B, 4B and 5B, after a phase change material layerand a conductive layer for top electrodes on the second insulation layer112 that has the heaters 114 is then sequentially deposited. Stackpatterns 120 comprising phase change layers 116 and top electrodes 118are then formed so that they come into contact with the heaters 114. Thestack patterns 120 of the phase change layer 116 and the top electrodes118 are formed so that they have a length that extends over only twocells among the cells arranged in the second direction Y, and are inoperational contact with only the heaters 114 of underlying two memorycells. The stack patterns 120 of the phase change layer 116 and the topelectrodes 118 may have a width W1 of 10˜200 nm along the direction ofthe word line and may have a length L1 of 50˜500 nm along the seconddirection Y. The stack patterns 120 may have a first separation distanceD1 of 20˜200 nm along the first direction X and a second separationdistance D2 of 20˜200 nm along the second direction Y. The separationdistances between the stack patterns 120 in the first direction Y andthe second direction Y may be different from each other.

In the present invention, the stack patterns 120 of the phase changelayer 116 and the top electrodes 118 have a length remarkably shorterthan that of the stack patterns as compared to the conventionalfabrication arts that often times can extend well over about onethousand cells. Accordingly, in the present invention, defects such asthe collapse of the stack patterns 120 are far less likely to occur whenconducting a patterning process. Further, in the present invention, theetch loss of the peripheral portions of the phase change layer 116 canbe substantially suppressed, whereby making it is possible tosubstantially prevent the composition of the phase change layer 116 frombeing substantially changed due to the etch loss.

Referring to FIGS. 3C, 4C and 5C, a third insulation layer 122 is formedon the second insulation layer 112 in which the second insulation layerincludes the stack patterns 120 of the phase change layer 116 and thetop electrodes 118. Selectively etching the third insulation layer 122and the second insulation layer 112, third holes H3 are defined thatexpose the center portions of the stack patterns 120 with respect to thesecond direction Y and second contact holes C2 are defined that exposethe first contact plugs 106. The third holes H3 and the second contactholes C2 are then filled with a conductive layer, to form a plurality offirst top electrode contacts 124 and a plurality of second contact plugs126. One preferred configuration is that the first top electrodecontacts 124 are formed so that they have a size S1 of 20˜200 nm in thefirst and second directions X and Y and have a W2 of 0˜100 nm gapbetween an edge of the top electrode 118 of each stack pattern 120 andan edge of the respective first top electrode contact 124. Anotherpreferred configuration is that the first top electrode contacts 124 maybe formed so that they have different sizes in the first direction X andthe second direction Y.

The first top electrode contacts 124 may be formed in a zigzag patternwith respect to the stack patterns 120 of the phase change layer 116 andthe top electrodes 118, whereby the margin of a contact process can beincreased.

Referring to FIGS. 3D, 4D and 5D, a conductive layer comprising ametallic material is formed on the third insulation layer 122 in whichthe third insulation layer 122 includes the first top electrode contacts124 and the second contact plugs 126. By selectively patterning thisconductive layer, a plurality of wiring patterns 130 is then formed sothat each wiring pattern is in operational contact with two first topelectrode contacts 124 adjoining each other along the second directionY, and buffer patterns 132 are also formed on the second contact plugs126. The wiring patterns 130 may have a width W3 of 20˜200 nm along thefirst direction X and a length L3 of 50˜1,000 nm along the seconddirection Y. Also, the wiring patterns 130 may have a separationdistance D3 of 10˜100 nm along the first direction X. The wiringpatterns 130 connect the stack patterns 120 of the phase change layer116 and the top electrodes 118 in the structure of a chain. Preferably,the buffer patterns 132 have the configuration of a pillar and thesectional shape of a rectangle or a square with respect to a top planview.

Referring to FIGS. 3E, 4E and 5E, a fourth insulation layer 134 isformed on the third insulation layer 122 which is formed with the wiringpatterns 130 and the buffer patterns 132. After defining fourth holes H4using the selective etching the fourth insulation layer 134. Centerportions of the wiring patterns 130 are exposed with respect to thesecond direction Y. Second top electrode contacts 136 are formed byfilling a conductive layer in the fourth holes H4. The second topelectrode contacts 136 may have a size S2 of 20˜200 nm in both the firstdirection X and the second direction Y. The second top electrodecontacts 136 may be formed such that they have different sizes in thefirst direction X and the second direction Y.

Referring to FIGS. 3F, 4F and 5F, after depositing a conductive metallayer on the fourth insulation layer 134 including the second topelectrode contacts 136, and selectively patterning these conductivemetal layer, bit lines 140 are formed. The bit lines 140 extend alongthe second direction Y and come into operational contact with the secondtop electrode contacts 136 arranged in the second direction Y. The bitlines 140 may have a width W4 of 20˜200 nm.

The bit lines 140 and the top electrodes 118 are connected to each otherby way of the wiring patterns 130. As compared to the conventional art,the contact depth between the bit lines 140 and the top electrodes 118can be substantially reduced.

Referring to FIGS. 3G, 4G and 5G, a fifth insulation layer 142 is formedon the fourth insulation layer 134 including the bit lines 140. Afterdefining third contact holes C3 by selectively etching the fifthinsulation layer 142 and the fourth insulation layer 134 so that thebuffer patterns 132 are exposed, and by filling a conductive layer inthese third contact holes C3, a plurality of third contact plugs 144 isformed to come into contact with the buffer patterns 132.

Referring to FIGS. 3H, 4H and 5H, a conductive layer, for use indefining word lines, is deposited on the fifth insulation layer 142including the third contact plugs 144. By patterning the conductivelayer, word lines 150 are then formed so that they extend along thefirst direction X which is substantially perpendicular to the seconddirection Y. Accordingly, the bit lines 140 are formed and are arrangedat substantially regular intervals along the second direction Y, andcome into contact with the third contact plugs 144 arranged in the firstdirection X. Accordingly, the word lines 150 are connected with the N+base layer 102 of the silicon substrate 100 by way of the first contactplugs 106, the second contact plugs 126, the buffer patterns 132 and thethird contact plugs 144.

Thereafter, while not shown in the drawings, by sequentially conductinga series of subsequent well-known processes, the manufacture of thephase change memory device according to the present embodiment iscompleted.

As described above, in the present embodiment, the stack patterns of thephase change layer and the top electrodes are formed to have arelatively short length that extends over only two cells. Accordingly,collapse of the stack patterns can be avoided or prevented. Further, anysubsequent alteration of the composition of the phase change layer canbe avoided or prevented associated with etch losses of the phase changelayer. Since the contact depth between the top electrodes and the bitlines can be substantially reduced, the resultant stability of thecontact process can be enhanced. As a consequence, the reliability ofthe phase change memory device and the manufacturing yield thereof canbe improved and increased.

FIGS. 6A through 6D are plan views illustrating the processes of amethod for manufacturing a phase change memory device in accordance withstill yet another embodiment of the present invention. Here, the methodaccording to this embodiment is the substantially the same as theaforementioned embodiment up to the step of forming the stack patternsof a phase change and top electrodes. Therefore, only the steps afterforming the stack patterns will be illustrated and described herein. Thesame reference numerals will be used to refer to the same parts as thoseillustrated in FIGS. 3A through 3H.

Referring to FIG. 6A, a third insulation layer is formed on theresultant structure which is formed with the stack patterns 120 of aphase change layer and top electrodes. Then, after defining third holesfor exposing the stack patterns 120 and second contact holes forexposing first contact plugs by selectively etching the third insulationlayer, and by filling a conductive layer in the third holes and thesecond contact holes, a plurality of first top electrode contacts 124 aare formed. The first top electrode contacts 124 a are formed to comeinto contact with the top electrodes of the stack patterns 120. Thesecond contact plugs 126 are formed to come into contact with the firstcontact plugs.

The first top electrode contacts 124 a are formed so that each first topelectrode contacts 124 a is located over a respective heater. This isunlike the aforementioned embodiment in which each first top electrodecontact is formed on the center portion of each stack pattern withrespect to the second direction Y. The size of the first top electrodecontacts 124 a and the gap between the edge of the top electrode and theedge of each first top electrode contact 124 a are substantiallyequivalent or equal to those of the aforementioned embodiment.

Referring to FIG. 6B, a conductive layer comprising a metallic layer isformed on the third insulation layer including the first top electrodecontacts 124 a and the second contact plugs 126. Then, by selectivelypatterning the conductive layer, a plurality of wiring patterns 130 aare formed over the stack patterns 120 so that wiring pattern 130 a isin operative contact with two first top electrode contacts 124 apositioned over each stack pattern 120. The buffer patterns 132 areformed on the second contact plugs 126.

Unlike the aforementioned embodiment in which the wiring patternsconnect the stack patterns 120 of the phase change layer and the topelectrodes in the structure of a chain, the wiring patterns 130 a ofthis embodiment are formed to be simply located over the respectivestack patterns 120. The width of the wiring patterns 130 a in the firstdirection X, the length of the wiring patterns 130 a in the seconddirection Y, and the separation distance of the wiring patterns 130 aare made substantially equal to those of the aforementioned embodiment.

Referring to FIG. 6C, a fourth insulation layer is formed on the thirdinsulation layer which is formed with the wiring patterns 130 a and thebuffer patterns 132. Then, after selectively defining fourth holes foruse in exposing the center portions of the wiring patterns 130 a in thesecond direction Y by selectively etching the fourth insulation layer,and by filling a conductive layer in these fourth holes, a plurality ofsecond top electrode contacts 136 a are formed.

Unlike the aforementioned embodiment in which each second top electrodecontact is formed on the center portion of each wiring pattern such thatit is positioned between two stack patterns when viewed in the seconddirection Y, each second top electrode contact 136 a according to thepresent embodiment is formed on the center portion of each wiringpattern so that it is positioned centrally over each stack pattern 120with respect to the second direction Y. The second top electrodecontacts 136 a that are formed have substantially the same size as theaforementioned embodiment.

Referring to FIG. 6D, after depositing a conductive layer for bit lineson the fourth insulation layer including the second top electrodecontact 136 a, by selectively patterning the conductive layer, bit lines140 are formed. The bit lines 140 extend along the second direction Yand come into operational contact with the second top electrode contacts136 a arranged in the second direction Y. The bit lines 140 have a widthof 20˜200 nm.

Thereafter, while not shown in the drawings, by sequentially conductinga series of subsequent well-known processes including processes forforming third contact plugs and word lines, the manufacture of the phasechange memory device according to the present embodiment is completed.

Even in the phase change memory device according to the presentembodiment, since the stack patterns of the phase change layer and thetop electrodes are formed to have a length that only extends over twounderlying memory cells, collapse of the stack patterns can be minimizedor prevented. Also, by shortening the length of the stack pattern, it ispossible to minimize or to prevent the composition of the phase changelayer from being changed brought about by etch loss of the phase changelayer. As a result, the reliability and the manufacturing yield of aphase change memory device can be substantially improved and increased.

Although specific embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

1. A phase change memory device comprising: a plurality of stackpatterns formed over a silicon substrate, each stack pattern comprisinga phase change layer and a top electrode; and a plurality of bit linesformed over the stack patterns, wherein each stack pattern is formed tohave a length that extends over only two memory cells of the devicealong a direction substantially in parallel to the direction of the bitlines, wherein the stack patterns are located in a zigzag pattern alonga direction substantially perpendicular to the direction of the bitlines wherein the bit lines and word lines are substantially straight inthe entire memory cell area, wherein the bit lines and the word linesare substantially perpendicular to each other; and wherein the wordlines are disposed on top of the whole memory stack and above the bitlines.
 2. The phase change memory device according to claim 1, furthercomprising: a plurality of first top electrode contacts, a plurality ofwiring patterns and a plurality of second top electrode contactsinterposed between the stack patterns and the bit lines.
 3. The phasechange memory device according to claim 2, wherein the first topelectrode contacts are on center portions of the stack patterns relativeto the direction of the bit lines.
 4. The phase change memory deviceaccording to claim 2, wherein the wiring patterns are connected to thestack patterns by way of the first top electrode contacts.
 5. The phasechange memory device according to claim 2, wherein the second topelectrode contacts are on center portions of the wiring patternsrelative to the direction of the bit lines.
 6. The phase change memorydevice according to claim 2, wherein the first top electrode contacts arespective underlying stack pattern.
 7. The phase change memory deviceaccording to claim 2, wherein the wiring patterns are over the stackpatterns.
 8. A phase change memory device comprising: a siliconsubstrate having a plurality of active regions that extend along a firstdirection on the silicon substrate and that are arranged atsubstantially regular intervals along a second direction on the siliconsubstrate, wherein the second direction being substantiallyperpendicular to the first direction; a plurality of switching elementsformed in the active regions of the silicon substrate; a plurality ofheaters formed on the switching elements; a plurality of stack patternsformed on top of the heaters, each stack pattern comprising a phasechange layer and a top electrode, each stack pattern having a lengththat extends along the second direction and each stack pattern cominginto contact with two heaters underlying each respective stack pattern;a plurality of first top electrode contacts formed on the stackpatterns; a plurality of wiring patterns formed along the seconddirection and formed on the first top electrode contacts, each wiringpattern coming into contact with two first top electrode contactsunderlying each respective first top electrode contacts; a plurality ofsecond top electrode contacts formed on the wiring patterns; a pluralityof bit lines formed to be connected to the second top electrodecontacts, the bit lines extending along the second direction; and aplurality of word lines formed over the bit lines such that the wordlines extend along the first direction so that the word lines aresubstantially perpendicular to the bit lines, each word line connectedto a respective active region of the silicon substrate.
 9. The phasechange memory device according to claim 8, wherein the switchingelements comprise vertical PN diodes.
 10. The phase change memory deviceaccording to claim 9, further comprising: a plurality of N+ base layersformed in surfaces of the active regions of the silicon substrate. 11.The phase change memory device according to claim 8, wherein the stackpatterns are arranged in a zigzag type pattern along the firstdirection.
 12. The phase change memory device according to claim 8,wherein the stack patterns have a width of 10˜200 nm in the firstdirection and a length of 50˜500 nm in the second direction.
 13. Thephase change memory device according to claim 8, wherein the stackpatterns have a separation distance of 20˜200 nm in the first directionand a separation distance of 20˜200 nm in the second direction.
 14. Thephase change memory device according to claim 8, wherein the first topelectrode contacts are substantially located on center portions of thestack patterns with respect to the second direction.
 15. The phasechange memory device according to claim 8, wherein the first topelectrode contacts have a size of 20˜200 nm in each of the firstdirection and the second direction.
 16. The phase change memory deviceaccording to claim 8, wherein the first top electrode contacts havesizes that are different in the first direction and the seconddirection.
 17. The phase change memory device according to claim 8,wherein the first top electrode contacts have a 0˜100 nm gap between anedge of the top electrode and an edge of each first top electrodecontact.
 18. The phase change memory device according to claim 8,wherein the wiring patterns are connected to underlying stack patternsby way of underlying first top electrode contacts.
 19. The phase changememory device according to claim 8, wherein the wiring patterns have awidth of 20˜200 nm in the first direction and a length of 50˜1,000 nm inthe second direction.
 20. The phase change memory device according toclaim 8, wherein the wiring patterns have a separation distance of10˜100 nm in the first direction.
 21. The phase change memory deviceaccording to claim 8, wherein the second top electrode contacts arelocated at center portions of the wiring patterns relative to the seconddirection.
 22. The phase change memory device according to claim 8,wherein the second top electrode contacts have a size of 20˜200 nm ineach of the first direction and the second direction.
 23. The phasechange memory device according to claim 8, wherein the second topelectrode contacts have sizes that are different in the first directionand the second direction.
 24. The phase change memory device accordingto claim 8, wherein each bit line has a width of 20˜200 nm.